Title :
Fully self-aligned tri-layer a-Si:H TFT with ultra-thin active layer
Author :
Thomasson, D.B. ; Jackson, T.N.
Author_Institution :
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
To the best of our knowledge, the simple processing method described is the first fully self-aligned trilayer TFT with deposited n/sup +/ contacts. This process requires one less mask than our standard tri-layer process, with one additional unmasked backside exposure. In addition, these fully self-aligned TFTs have an ultra-thin a-Si:H layer that results in improved performance.
Keywords :
MISFET; amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; silicon; thin film transistors; Mo-SiN-Si:H; a-Si:H TFT; deposited n/sup +/ contacts; fully self-aligned trilayer TFT; processing method; ultra-thin active layer; unmasked backside exposure; Active matrix liquid crystal displays; Amorphous silicon; Character generation; Crystalline materials; Etching; Laboratories; Parasitic capacitance; Silicon compounds; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612470
