Title :
Passivation effects of ion plating capping oxide on poly-Si TFTs
Author :
Ching-Fa Yeh ; Tai-Ju Chen ; Jiann-Shiun Kao
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The reduction of defect density in poly-Si active layers is an important issue to improve poly-Si TFT performance. A novel method has been developed for efficient passivation of these defects using ion plating (IP) oxides as capping layers. IP oxide is deposited while Si and O/sub 2/ gases are activated and ionized by an Ar plasma, and shows excellent physicochemical and electrical properties even when deposited at room temperature. IP oxide has been shown to be feasible for application as a poly-Si TFT gate insulator, and to contribute to excellent device characteristics.
Keywords :
MOSFET; elemental semiconductors; insulating thin films; ion plating; passivation; plasma deposited coatings; silicon; thin film transistors; Ar; Ar plasma; O/sub 2/; Si-SiO/sub 2/; TFT gate insulator; defect density reduction; ion plating capping oxide; passivation effects; poly-Si active layers; polysilicon TFTs; Annealing; Bonding; Electron devices; Paramagnetic resonance; Passivation; Plasma applications; Plasma devices; Plasma properties; Plasma temperature; Thin film transistors;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612473
