Title :
Magnetoresistance and Current-driven Resistance Change Measurements in NiFe films with a Nanoconstriction
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
Ballistic magnetoresistance (MR) measurements with large magnetic field were performed using sputtered NiFe film as the MR layer. The origin of MR is deduced from current-driven resistance change measurements. The nanoscale point contact (PC) was formed at the junction of the pinned area, which is covered with a CoPt hard magnetic film, and the free area. Results show that the resistance increased (decreased) with positive (negative) sense current. This asymmetry might be due to the domain wall (DW) state, which was pinned at or depinned from the PC by a spin transfer effect.
Keywords :
cobalt alloys; enhanced magnetoresistance; ferromagnetic materials; interface magnetism; iron alloys; magnetic domain walls; magnetic thin films; nanostructured materials; nickel alloys; permanent magnets; platinum alloys; point contacts; NiFe-CoPt; ballistic magnetoresistance; current-driven resistance change; domain wall pinning; free area; hard magnetic film; magnetic junction; nanoconstriction; nanoscale point contact; pinned area; spin transfer effect; Anisotropic magnetoresistance; Ballistic magnetoresistance; Current measurement; Electrical resistance measurement; Ion beams; Magnetic field measurement; Magnetic films; Milling; Nickel; Tellurium;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376337
