• DocumentCode
    2944256
  • Title

    High-mobility pentacene-based organic thin film transistors

  • Author

    Lin, Y.Y. ; Gundlach, D.J. ; Nelson, S.F. ; Jackson, T.N.

  • Author_Institution
    Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1997
  • fDate
    23-25 June 1997
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    We recently reported pentacene-based organic thin film transistors (TFTs) with field-effect mobility and on/off current ratio comparable to hydrogenated amorphous silicon devices. However, these devices had large threshold voltage (typically >+20 V; that is, the devices are on at zero gate bias) and large subthreshold slope (typically >5 V/decade), which makes application in low-voltage circuits problematic. We have now fabricated pentacene-based TFTs with field-effect mobility as large as 1.5 cm/sup 2//V-s, low threshold voltage, and subthreshold slope as low as 1.6 V/decade.
  • Keywords
    carrier mobility; organic compounds; organic semiconductors; thin film transistors; field effect mobility; low-voltage circuit; on/off current ratio; organic thin film transistor; pentacene; subthreshold slope; threshold voltage; Dielectric devices; Dielectric substrates; Dielectric thin films; Electrodes; Laboratories; Organic materials; Organic thin film transistors; Pentacene; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 1997. 5th
  • Conference_Location
    Fort Collins, CO, USA
  • Print_ISBN
    0-7803-3911-8
  • Type

    conf

  • DOI
    10.1109/DRC.1997.612475
  • Filename
    612475