DocumentCode
2944256
Title
High-mobility pentacene-based organic thin film transistors
Author
Lin, Y.Y. ; Gundlach, D.J. ; Nelson, S.F. ; Jackson, T.N.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
60
Lastpage
61
Abstract
We recently reported pentacene-based organic thin film transistors (TFTs) with field-effect mobility and on/off current ratio comparable to hydrogenated amorphous silicon devices. However, these devices had large threshold voltage (typically >+20 V; that is, the devices are on at zero gate bias) and large subthreshold slope (typically >5 V/decade), which makes application in low-voltage circuits problematic. We have now fabricated pentacene-based TFTs with field-effect mobility as large as 1.5 cm/sup 2//V-s, low threshold voltage, and subthreshold slope as low as 1.6 V/decade.
Keywords
carrier mobility; organic compounds; organic semiconductors; thin film transistors; field effect mobility; low-voltage circuit; on/off current ratio; organic thin film transistor; pentacene; subthreshold slope; threshold voltage; Dielectric devices; Dielectric substrates; Dielectric thin films; Electrodes; Laboratories; Organic materials; Organic thin film transistors; Pentacene; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612475
Filename
612475
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