Title :
High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications
Author :
Wang, Y.C. ; Kuo, J.M. ; Lothian, J.R. ; Ren, F. ; Tsai, H.S. ; Weiner, J.S. ; Lin, James ; Tate, A. ; Mayo, W.E. ; Chen, Y.K.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In the RF transmit/receive block of a wireless personal communication system, the power amplifiers consume the largest battery power. To reduce the size and power consumption of the systems, the demand for low supply voltage power transistors with high efficiency is growing for portable wireless communication applications. High electron mobility transistors (HEMTs) are an excellent candidate for such applications due to their high maximum drain current, low knee voltage and high cutoff frequencies. In this talk we demonstrate a high efficiency and low supply voltage power transistor for portable wireless communication applications using a new In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P-In/sub 0.2/Ga/sub 0.8/As double-heterojunction pseudomorphic HEMT (DHPHEMT).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; land mobile radio; power HEMT; InAlGaP-InGaAs; RF transmit/receive block; double-heterojunction pseudomorphic HEMT; efficiency; low voltage portable wireless personal communication; power HEMT; power amplifier; Batteries; HEMTs; Low voltage; MODFETs; Power amplifiers; Power supplies; Power transistors; Radio frequency; Radiofrequency amplifiers; Wireless communication;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612478
