Title :
Experimental and simulation study of Cu-Al NOL for CCP-CPP-GMR spin-valve
Author :
Kim, Y. ; Soh, J. ; Kim, S. ; Lee, K. ; Chung, Y. ; Kawasaki, S. ; Miyake, K. ; Doi, M. ; Sahashi, M.
Author_Institution :
Korea Univ., Seoul
Abstract :
In this study, we introduce the energy application such as annealing on the Al as deposition state and from molecular dynamics (MD) simulations, the details of atomic configurations for Al atoms on Cu(l 11) surface were investigated. Using this method we can control the size of the Al grains, and, hence, the CCP phenomena can be controlled and improved.The current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect has been greatly attracted for its application to ultra high density storage devices.
Keywords :
aluminium; annealing; copper; giant magnetoresistance; grain size; magnetic multilayers; magnetic thin films; molecular dynamics method; oxidation; spin valves; CCP-CPP-GMR spin-valve; Cu; Cu-Al; MD simulations; annealing; atomic configurations; current-perpendicular-to-plane giant magnetoresistance effect; grain size; high density storage devices; magnetic multilayer; molecular dynamics simulations; oxidation; thin film; Annealing; Atomic layer deposition; Giant magnetoresistance; Materials science and technology; Oxidation; Rough surfaces; Size control; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376344
