Title :
Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs
Author :
Ren, F. ; Hong, M. ; Kuo, J.M. ; Hobson, W.S. ; Tsai, H.S. ; Lothian, J.R. ; Mannaerts, J.P. ; Kwo, J. ; Chu, S.N.G. ; Lin, J. ; Chen, Y.K. ; Cho, A.Y.
Author_Institution :
Lucent Technologies, AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We have investigated InGaAs MOSFETs using a mixture of Ga/sub 2/O/sub 3/ and Gd/sub 2/O/sub 3/ as the gate dielectric evaporated from a high-purity single-crystal Gd/sub 3/Ga/sub 5/O/sub 12/ source. We report the first Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFETs on an InP semi-insulating substrate. A 0.75/spl times/50 /spl mu/m/sup 2/ gate device exhibits an extrinsic transconductance of 190 mS/mm which is an order of magnitude improvement over previously reported values. The current gain cut-off frequency and the maximum frequency of oscillation are 6.8 and 7.8 GHz, respectively.
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; 190 mS/mm; 6.8 GHz; 7.8 GHz; Ga/sub 2/O/sub 3//Gd/sub 2/O/sub 3/ gate dielectric; Gd/sub 3/Ga/sub 5/O/sub 12/; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As MOSFET; InGaAs enhancement-mode n-channel MOSFETs; InGaAs-Ga/sub 2/O/sub 3/Gd/sub 2/O/sub 3/; InP; InP semi-insulating substrate; current gain cut-off frequency; drain I-V characteristics; extrinsic transconductance; maximum frequency of oscillation; single-crystal Gd/sub 3/Ga/sub 5/O/sub 12/ source; Gold; Indium gallium arsenide; Indium phosphide; MOSFETs; Molecular beam epitaxial growth; Optical surface waves; Plasma temperature; Substrates; Transconductance; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612482
