Title :
A novel Si bistable diode
Author :
Xuegen Zhu ; Xinyu Zheng ; Pak, M. ; Tanner, M.O. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
We have previously reported bistable I-V characteristics in a delta-doped SiGe/Si diode and its application to a SRAM cell. In this paper, a novel full Si bistable diode is studied. The full Si feature of the device makes it more compatible with mainstream Si technology. The I-V bistability is achieved by band engineering with two double delta-doped tunnel junctions. Since the bistability is based on quantum tunneling, the device can be conveniently built in a vertical stack leading to further reduction of device area. The new bistable diode operates with several positive feedback mechanisms, which lead to fast turn-on and turn-off speeds.
Keywords :
SRAM chips; elemental semiconductors; quantum interference devices; silicon; tunnel diodes; I-V bistability; SRAM cell; Si; Si bistable diode; band engineering; bistable I-V characteristics; double delta-doped tunnel junctions; fast turn-off speed; fast turn-on speed; positive feedback mechanisms; quantum tunneling; temperature dependence; vertical stack; Charge carrier processes; Conductivity; Diodes; Electron devices; Etching; Germanium silicon alloys; Laboratories; Random access memory; Silicon germanium; Switches;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612485
