Title :
Sub-10 nm imprint lithography and applications
Author :
Krauss, P.R. ; Chou, S.Y.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Nanoimprint lithography (NIL) is a new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput. In this paper, we present significant new developments in achieving holes and dots with 6 nm feature size, 40 nm period on silicon, and 10 nm feature size, 40 nm period on a Au substrate. Moreover, we present an application of NIL to the fabrication of nanoscale compact disks (NanoCDs) of 400 Gbits/in/sup 2/ data density.
Keywords :
CD-ROMs; electron beam lithography; nanotechnology; scanning electron microscopy; sputter etching; 10 nm; 40 nm; 6 nm; Au; Au substrate; PMMA; RIE; SEM micrographs; Si; Si substrate; SiO/sub 2/; SiO/sub 2/ molds; compression molding; dots; feature size; high resolution electron beam lithography; high throughput; holes; nanoimprint lithography; nanoscale compact disks; nanostructure fabrication; period; resist deformation; Chemicals; Compression molding; Fabrication; Gold; Lithography; Nanolithography; Nanostructures; Resists; Silicon; Throughput;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612486
