Ru/NiFeX/Si seedlayer to attain finer grains in CoCrPt-SiO2 perpendicular magnetic recording layer

In this study, we propose thin NiFeX/Si seedlayer for getting good crystallographic structure as well as finer grains of thin Ru layer. However, relatively thick thickness in the Ru layer deposited onto bcc-like thin Ta layer is needed for attaining the required crystallographic properties. Such thick intermediate layer causes to degrade the recording performances owing to deteriorated writing field gradient.