A Heterostructure Barrier Charge Swing device for frequency multiplication at 306 GHz

Author

Nicolae, Bogdan ; Ruf, Marcel ; Schür, Jan ; Schmidt, Lorenz-Peter ; Hartnagel, Hans L.

Author_Institution

Institute of Microwave Engineering, Technical University of Darmstadt, Germany

fYear

2008

fDate

15-20 June 2008

Firstpage

1545

Lastpage

1548

Abstract

A new type of frequency multiplier which is called heterostructure barrier charge swing (HBCS) is proposed. It concerns a bunch of charge carriers swinging in a trough between heterojunction barriers. The behavior of the device is simulated and experimentally verified. Efficiencies of 27% for tripler and 14% for quintupler operation are predicted. A split-block mount with planar circuitry is presented to prove tripler operation capabilities from 102 GHz to 306 GHz.

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; semiconductor heterojunctions; AlGaAs-GaAs; efficiency 14 percent; efficiency 27 percent; frequency 102 GHz to 306 GHz; frequency multiplication; heterojunction barriers; heterostructure barrier charge swing device; planar circuitry; quintupler operation; split-block mount; tripler operation; Aluminum; Charge carriers; Circuit simulation; Frequency conversion; Gallium arsenide; Heterojunctions; Microstrip; Microwave devices; Microwave technology; Varactors; HBCS; microstrip circuits; semiconductor heterojunctions; submillimeter wave generation; waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633076

Filename

4633076