Title :
Reduced 1/f noise and g/sub m/ degradation for sub-0.25 /spl mu/m MOSFETs with 25 /spl Aring/-50 /spl Aring/ gate oxides grown on nitrogen implanted Si substrates
Author :
Liu, C.T. ; Misra, D. ; Cheung, K.P. ; Alers, G.B. ; Chang, C.P. ; Colonell, J.I. ; Lai, W.Y.C. ; Pai, C.S. ; Liu, R. ; Clemens, J.T.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We introduce a light dose of nitrogen implant (N/sup +/ I/I) into the Si substrate before growing the oxides, and incorporated /spl sim/3-4 atomic% of nitrogen in the oxides. Consequently, the 1/f noise is reduced by a factor of 2-5, and the g/sub m/ degradation is reduced by a factor of 5. The N/sup +/ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 /spl Aring/ in this experiment. MOSFETs of 0.2 /spl mu/m physically are then fabricated with 25 /spl Aring/ oxides on N/sup +/ I/I substrates.
Keywords :
1/f noise; MOSFET; hole traps; ion implantation; nitrogen; oxidation; semiconductor device noise; 1/f noise; MOSFET; Si substrate; Si:N-SiO/sub 2/; breakdown field; gate oxide growth; hole trap model; nitrogen implantation; transconductance; Degradation; Electric breakdown; Frequency; Implants; MOS devices; MOSFETs; Noise reduction; Power supplies; Stress; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612498
