DocumentCode
2944758
Title
High gain 4H-SiC static induction transistors using novel sub-micron airbridging
Author
Siergiej, R.R. ; Morse, A.W. ; Esker, P.M. ; Smith, T.J. ; Bojko, R.J. ; Rowland, L.B. ; Clarke, R.C.
Author_Institution
Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
136
Lastpage
137
Abstract
For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.
Keywords
Ge-Si alloys; semiconductor materials; semiconductor technology; static induction transistors; 15 dB; 3 GHz; 4H-SiC static induction transistor; SiC; fabrication; semiconductor; small signal gain; submicron source airbridging; Degradation; Dielectric measurements; Gain measurement; Packaging; Parasitic capacitance; Performance gain; Silicon carbide; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612502
Filename
612502
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