DocumentCode
2944776
Title
High power operation of 4H-SiC MESFETs at 10 GHz
Author
Sriram, S. ; Smith, T.J. ; Rowland, L.B. ; Burk, A.A., Jr. ; Augustine, G. ; Balakrishna, V. ; Hobgood, H.M. ; Brandt, C.D.
Author_Institution
Sci. & Technol. Center, Northrop Grumman Corp., Pittsburgh, PA, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
138
Lastpage
139
Abstract
We report for the first time 10 GHz power performance of SiC MESFETs fabricated on Northrop Grumman high resistivity 4H-SiC substrates. We have obtained a power output of 6 Watts at 10 GHz using a 1.92 mm periphery MESFET with 0.5 /spl mu/m gate length. The associated gain, drain efficiency, and power added efficiency were 5.1 dB, 50%, and 34.6% respectively.
Keywords
microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; semiconductor materials; silicon compounds; 10 GHz; 34.6 percent; 4H-SiC MESFET; 5.1 dB; 50 percent; 6 W; SiC; drain efficiency; gain; high power operation; power added efficiency; Electrons; MESFETs; Microwave devices; Microwave technology; Pulse measurements; Radio frequency; Silicon carbide; Substrates; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612503
Filename
612503
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