DocumentCode
2944806
Title
High speed and high power AlGaN/GaN MODFETs
Author
Wu, Y.-F. ; Keller, B.P. ; Keller, S. ; Nguyen, N.X. ; Le, M. ; Nguyen, C. ; Jenkins, T.J. ; Kehias, L.T. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
142
Lastpage
143
Abstract
Device optimization of AlGaN/GaN MODFETs has resulted in a record high f/sub T/ of 50 GHz for a GaN based FET and a record high CW power density of 2.54/spl sim/2.84 W/mm in X band for a solid-state FET.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; 50 GHz; AlGaN-GaN; CW power density; X band; current gain cutoff frequency; device optimization; high speed high power AlGaN/GaN MODFET; solid-state FET; Aluminum gallium nitride; Charge carrier density; Cutoff frequency; Electron devices; FETs; Gallium nitride; HEMTs; Laboratories; MODFETs; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612505
Filename
612505
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