Title :
High speed and high power AlGaN/GaN MODFETs
Author :
Wu, Y.-F. ; Keller, B.P. ; Keller, S. ; Nguyen, N.X. ; Le, M. ; Nguyen, C. ; Jenkins, T.J. ; Kehias, L.T. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Device optimization of AlGaN/GaN MODFETs has resulted in a record high f/sub T/ of 50 GHz for a GaN based FET and a record high CW power density of 2.54/spl sim/2.84 W/mm in X band for a solid-state FET.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; 50 GHz; AlGaN-GaN; CW power density; X band; current gain cutoff frequency; device optimization; high speed high power AlGaN/GaN MODFET; solid-state FET; Aluminum gallium nitride; Charge carrier density; Cutoff frequency; Electron devices; FETs; Gallium nitride; HEMTs; Laboratories; MODFETs; Microwave devices;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612505
