Title :
Key factors to suppress thickness variation in MOCVD HfSiON-Films
Author :
Yamamoto, Ichiro ; Kato, Yoshitake
Author_Institution :
NEC Electron. Corp., Sagamihara
Abstract :
We investigated the deposition process reproducibility of extremely-thin (<1 nm) HfSiON-films deposited in a batch-type reactor. The deposition-rate measured on a monitor-wafer appeared to be affected by the base-oxide thickness, substrate doping and the surface material of the monitor-wafer. Furthermore, the deposition-rate is found to be affected also by the surface material of the back-surface of its adjacent wafer. Precise control of these factors is essential for good reproducibility.
Keywords :
MOCVD; dielectric materials; hafnium compounds; semiconductor doping; thick films; HfSiON; HfSiON-films; MOCVD; batch-type reactor; deposition; monitor-wafer; substrate doping; thickness variation; Atomic measurements; Dielectric materials; Doping; High K dielectric materials; Inductors; MOCVD; Monitoring; Reproducibility of results; Substrates; Thickness measurement;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446844
