Title :
High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over 150 GHz
Author :
Shimizu, N. ; Watanabe, N. ; Furuta, T. ; Ishibashi, T.
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa, Japan
Abstract :
High-speed and high-saturation-power photodetectors operating at 1.3 and 1.55 /spl mu/m wavelength are attracting considerable attention for the purpose of configuring receivers with no broadband electronic post-amplifier. The uni-traveling-carrier photodiode (UTCPD) having a p-type photo-absorption layer and a widegap electron-collection layer is one candidate that fulfills the requirements. In this paper, we study photo-absorption layer design for faster response and demonstrate UTC-PD operations with 3-dB bandwidth of 152 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; semiconductor doping; 1.3 mum; 1.55 mum; 152 GHz; 3-dB bandwidth; InP-In/sub 0.53/Ga/sub 0.47/As; high-speed InP/InGaAs uni-traveling-carrier photodiode; high-speed high-saturation-power photodetectors; p-type photo-absorption layer; receiver configuration; stairlike potential profile; step-graded doping; widegap electron-collection layer; Bandwidth; Fourier transforms; Frequency response; Indium gallium arsenide; Indium phosphide; Photodiodes; Pulse measurements; Solid lasers; Time measurement; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612513
