Title :
Mass Metrology for controlling and understanding processes
Author :
Kunnen, Eddy ; Vecchio, Guglielma ; Redolfi, Augusto ; Everaert, Jean-Luc ; Delabie, Annelies ; Shi, Xiaoping ; Vanhaelemeersch, Serge ; Cunnane, Liam ; Kiermansz, Adrian
Author_Institution :
IMEC, Heverlee
Abstract :
In this paper we report on mass metrology used for the characterization of different process steps (etch, clean, cavity etch, HARP deposition and CMP) of shallow trench isolation (STI) module in conventional CMOS technology. We also report on mass metrology for the characterization of plasma doping and on HfO2 high k gate dielectric deposition process. The performance of the mass balance metrology is benchmarked against state of the art metrology, including ellipsometry and Rutherford Backscattering (RBS).
Keywords :
CMOS integrated circuits; Rutherford backscattering; ellipsometry; hafnium compounds; high-k dielectric thin films; isolation technology; mass measurement; CMOS technology; HfO2; Rutherford backscattering; STI module; ellipsometry; high k gate dielectric deposition process; mass balance metrology; mass metrology; plasma doping; shallow trench isolation; CMOS process; CMOS technology; Doping; Etching; Hafnium oxide; Isolation technology; Metrology; Plasma applications; Process control; Weight control;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446853
