Avalanche photodiode (APD) noise dependence on avalanche region width

Author

Li, K.F. ; Ong, D.S. ; David, J.P.R. ; Robson, P.N. ; Tozer, R.C. ; Rees, G.J. ; Grey, R.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1997

fDate

23-25 June 1997

Firstpage

170

Lastpage

171

Abstract

Conventional noise theory for APDs relates the avalanche noise to the ionization coefficients using McIntyre´s[ 11 noise theory. For the lowest excess noise factor (F), the material should have widely disparate ionization coefficients and the carrier type with the larger ionization coefficients should be injected. Unfortunately most conventional 111-V´ s have ionization coefficient ratios k=P/a close to unity and efforts to enhance k have mainly concentrated on MQW structures.

Keywords

III-V semiconductors; Monte Carlo methods; avalanche photodiodes; gallium arsenide; impact ionisation; p-i-n photodiodes; semiconductor device noise; 0.05 to 1 mum; 10 MHz; 4.2 MHz; APD noise dependence; AlAs etch stop layer; AlAs-GaAs; GaAs; GaAs buffer; MBE; MOVPE; Monte Carlo simulations; [001] GaAs substrates; avalanche region width; high electric fields; ionization distance; lock in amplifier system; low excess noise factor; multiplication fluctuation; n/sup +/-i-p/sup +/ diodes; noise bandwidth; noise measurements; noise mechanisms; p/sup +/-i-n/sup +/ diodes; pure electron carrier injection; pure hole carrier injection; thin avalanching regions; undoped GaAs avalanche region; Avalanche photodiodes; Charge carrier processes; Diodes; Epitaxial growth; Epitaxial layers; Etching; Frequency; Gallium arsenide; Noise measurement; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612517

Filename

612517