Title :
Avalanche photodiode (APD) noise dependence on avalanche region width
Author :
Li, K.F. ; Ong, D.S. ; David, J.P.R. ; Robson, P.N. ; Tozer, R.C. ; Rees, G.J. ; Grey, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
Conventional noise theory for APDs relates the avalanche noise to the ionization coefficients using McIntyre´s[ 11 noise theory. For the lowest excess noise factor (F), the material should have widely disparate ionization coefficients and the carrier type with the larger ionization coefficients should be injected. Unfortunately most conventional 111-V´ s have ionization coefficient ratios k=P/a close to unity and efforts to enhance k have mainly concentrated on MQW structures.
Keywords :
III-V semiconductors; Monte Carlo methods; avalanche photodiodes; gallium arsenide; impact ionisation; p-i-n photodiodes; semiconductor device noise; 0.05 to 1 mum; 10 MHz; 4.2 MHz; APD noise dependence; AlAs etch stop layer; AlAs-GaAs; GaAs; GaAs buffer; MBE; MOVPE; Monte Carlo simulations; [001] GaAs substrates; avalanche region width; high electric fields; ionization distance; lock in amplifier system; low excess noise factor; multiplication fluctuation; n/sup +/-i-p/sup +/ diodes; noise bandwidth; noise measurements; noise mechanisms; p/sup +/-i-n/sup +/ diodes; pure electron carrier injection; pure hole carrier injection; thin avalanching regions; undoped GaAs avalanche region; Avalanche photodiodes; Charge carrier processes; Diodes; Epitaxial growth; Epitaxial layers; Etching; Frequency; Gallium arsenide; Noise measurement; Performance evaluation;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612517
