Title :
Low-switching energy resonant-tunneling photodetectors
Author :
Moise, T.S. ; Goldsmith, C.L. ; Kao, Y.-C. ; Schow, C. ; Campbell, J.C.
Author_Institution :
Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report the optoelectronic characteristics of an optically-switched resonant-tunneling diode (ORTD) consisting of a 40 nm n/sup +/ InGaAs cap layer, a 250 nm n/sup +/ InAlAs emitter window, and an AlAs/InGaAs/AlAs DB heterostructure. Under the DB, we have positioned a thick undoped InGaAs absorber layer which serves both to absorb the incident photons and to increase the peak-to-valley voltage swing. In operation with photons of 0.9 eV or higher, the photogenerated electron-hole pairs within this absorber layer screen the applied electric field leading to a reduction in both peak and valley voltage. When biased with a resistor load, this photo-induced voltage shift is used to switch the device from a high-conductance to a low-conductance operating state. Tn contrast to previous demonstrations, we have integrated the ORTD within a microwave package to enable high-speed (Gb/s) optically-induced switching.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; photoconducting switches; photodetectors; photodiodes; resonant tunnelling diodes; 1 to 2 Gbit/s; 13 mW; 250 nm; 40 nm; AlAs/InGaAs/AlAs DB heterostructure; InAlAs emitter window; InGaAs cap layer; InGaAs-InAlAs-AlAs; ORTD integration; applied electric field screening; high to low conductance operating state switching; high-speed optically-induced switching; incident photon absorption; low switching energy; microwave package; optically-switched resonant-tunneling diode; optoelectronic characteristics; peak voltage; peak-to-valley voltage swing; photo-induced voltage shift; photogenerated electron-hole pairs; resistor load biasing; resonant-tunneling photodetectors; thick undoped InGaAs absorber layer; valley voltage; Diodes; High speed optical techniques; Indium compounds; Indium gallium arsenide; Optical switches; Photodetectors; Resistors; Resonant tunneling devices; Stimulated emission; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612518
