Process integration for Robust Contact 1 module of high density Floating Gate Memory device

Author

Song, Shengnian ; Wiseman, Joseph ; Yazdani, Nabil ; Foster, Chris ; Brown, Stuart ; Banerjee, Basab ; Joshi, Amol ; Kinoshita, Hiro ; Chang, Kuo-Tung ; Gabriel, Calvin

Author_Institution

Spansion LLC, Austin

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

1

Lastpage

3

Abstract

In this presentation, we describe the process integration of a robust Contact One module in a high density floating gate device. Comprehensive process window studies using critical dimension as the control parameter identified the main process limiters and defined the countermeasures for process optimizations. With this Contact One Module as one of the critical operations, good wafer electrical test results and high sort yield have been achieved.

Keywords

circuit optimisation; semiconductor storage; critical dimension; high density floating gate memory device; process integration; process limiters; process optimizations; robust contact 1 module; sort yield; wafer electrical test; Circuit testing; Contacts; Electron beams; Etching; Integrated circuit yield; Nonvolatile memory; Optical coupling; Robustness; Variable structure systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

978-1-4244-1142-9

Electronic_ISBN

1523-553X

Type

conf

DOI

10.1109/ISSM.2007.4446857

Filename

4446857