Title :
Low temperature MOCVD TiN process for 45nm contact metallization
Author :
Ai, Hua ; Jackson, Michael ; Yu, Sang Ho
Author_Institution :
Appl. Mater. Inc., Santa Clara
Abstract :
A low temperature (LT) MO TiN process has been developed to improve the bottom step coverage of MOCVD TiN film. The film properties, including film composition, grain orientation, and structure, have been characterized and are similar to the film properties of the original 405degC MO TiN process. It was also demonstrated that there is no negative impact of LT MO TiN on the iLB/W CVD fill/WCMP integration flow. The extended run showed that the new LT MO-TiN process is stable and has excellent particle performance.
Keywords :
MOCVD; crystal microstructure; low-temperature techniques; metallisation; nanotechnology; thin films; titanium compounds; TiN; bottom step coverage; contact metallization; film composition; grain orientation; grain structure; low-temperature MOCVD process; size 45 nm; Chemical analysis; Kinetic theory; Logic devices; MOCVD; Metallization; Performance analysis; Plasma temperature; Temperature dependence; Temperature distribution; Tin;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446860
