• DocumentCode
    2945106
  • Title

    Improved electrical performance for 65nm node and beyond through the integration of HARP O3/TEOS oxide films for STI, PMD, and thin film applications

  • Author

    Ching, Cary ; Whitesell, Harry ; Venkataraman, Shankar

  • Author_Institution
    Appl. Mater., Inc., Santa Clara
  • fYear
    2007
  • fDate
    15-17 Oct. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we discuss the HARPtrade (high aspect ratio process) 03/TEOS oxide film. A complete film property characterization is presented and a comparison with an HDP-CVD process is made. For 65 nm node and beyond, the HARP films can be used for multiple applications, including STI fill, PMD fill, and stress memorization.
  • Keywords
    chemical vapour deposition; electric properties; isolation technology; nanotechnology; thin films; HARP O3; PMD; STI; TEOS oxide films; complete film property characterization; electrical performance; high aspect ratio process; size 65 nm; thin film application; Annealing; Compressive stress; Conductive films; Furnaces; Plasma temperature; Stress measurement; Tensile stress; Throughput; Time measurement; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4244-1142-9
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • DOI
    10.1109/ISSM.2007.4446861
  • Filename
    4446861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2945106