Title :
Improved electrical performance for 65nm node and beyond through the integration of HARP O3/TEOS oxide films for STI, PMD, and thin film applications
Author :
Ching, Cary ; Whitesell, Harry ; Venkataraman, Shankar
Author_Institution :
Appl. Mater., Inc., Santa Clara
Abstract :
In this paper, we discuss the HARPtrade (high aspect ratio process) 03/TEOS oxide film. A complete film property characterization is presented and a comparison with an HDP-CVD process is made. For 65 nm node and beyond, the HARP films can be used for multiple applications, including STI fill, PMD fill, and stress memorization.
Keywords :
chemical vapour deposition; electric properties; isolation technology; nanotechnology; thin films; HARP O3; PMD; STI; TEOS oxide films; complete film property characterization; electrical performance; high aspect ratio process; size 65 nm; thin film application; Annealing; Compressive stress; Conductive films; Furnaces; Plasma temperature; Stress measurement; Tensile stress; Throughput; Time measurement; Wet etching;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446861
