DocumentCode
2945226
Title
Extending HDP for STI fill to 45nm with IPM
Author
Wang, Anchuan ; Bloking, Jason ; Wang, Linlin ; Vellaikal, Manoj ; Jeon, Jin Ho ; Lee, Young S. ; Whitesell, Harry S.
Author_Institution
Appl. Mater. Inc., Santa Clara
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
5
Abstract
A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45 nm node and beyond, with established HDP CVD film properties and integration. In this paper, the key aspects of the IPM process, deposition, etch, in-film fluorine and aluminum control are discussed to provide better understanding on gap fill optimization and manufacturing capability.
Keywords
coating techniques; etching; isolation technology; semiconductor device manufacture; deposition; etch cycles; gap fill optimization; high dencity plasma; integrated profile modulation; shallow trench isolation; size 45 nm; Argon; Dielectrics; Etching; Helium; Hydrogen; Plasma applications; Plasma sources; Radio frequency; Sputtering; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446868
Filename
4446868
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