Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN

Author

Ohmi, Shun-ichiro ; Nakano, Yusuke

Author_Institution

Tokyo Inst. of Technol., Yokohama

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO_xN_y films formed by ECR Ar/O² plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm² was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO_xN_y film formed by ECR plasma process so far.

Keywords

hafnium compounds; high-k dielectric thin films; rapid thermal annealing; silicon; ECR plasma oxidation; HfN; HfN ISSM paper; HfON; equivalent oxide thickness; high-k dielectric thin films; post deposition annealing; rapid cooling; rapid thermal annealing; silicon wafer; Argon; Cooling; Electric variables; Hafnium oxide; Oxidation; Plasma density; Plasma properties; Rapid thermal annealing; Rapid thermal processing; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

978-1-4244-1142-9

Electronic_ISBN

1523-553X

Type

conf

DOI

10.1109/ISSM.2007.4446875

Filename

4446875