Title :
Reduction of wafer edge induced defect by WEE optimization
Author :
Murata, Taiki ; Sato, Masayuki ; Goto, Tsuguo
Author_Institution :
Spansion Japan Ltd., Fukushima
Abstract :
In this paper, A unique defect caused by inter layer dielectric (ILD) film peeling from wafer edge is reported. The root cause analysis by using wafer edge/bevel inspection tool revealed that the source of the ILD film peeling is residual photoresist at wafer edge. Wafer edge exposure (WEE) condition was optimized to suppress the resist residue and consequent film peeling from wafer edge.
Keywords :
dielectric thin films; semiconductor device manufacture; WEE optimization; inter layer dielectric film; residual photoresist; root cause analysis; wafer edge exposure; wafer edge induced defect; wafer edge-bevel inspection tool; Delamination; Dielectric materials; Etching; Inspection; Optical films; Optical materials; Optical scattering; Resists; Semiconductor films; Tungsten;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446900
