DocumentCode :
2945835
Title :
Generation of spatial solitons in narrow-gap semiconductors
Author :
Skarka, V. ; Berezhiani, V.I.
Author_Institution :
Lab. POMA, Angers Univ., France
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only. Stable spatial solitons with two transverse dimensions can exist in materials characterized by a saturable nonlinearity that exactly compensates for the diffraction. Narrow-gap semiconductors, in particular III-V alloys with a small effective mass of conduction electrons, exhibits a large degree of nonparabolicity. In fact, in some narrow-gap semiconductors like InSb, the dispersion relation mimics that of a relativistic electron with a small effective mass, and with an effective "speed of light" several order smaller than the speed of light in a vacuum. In response to a laser pulse, due to the velocity-dependent mass the conduction electrons can simulate the dynamics of a relativistic plasma, at a pulse intensity which is a tiny fraction of the intensity required to create similar conditions in a normal gaseous plasma.
Keywords :
effective mass; laser beam effects; narrow band gap semiconductors; optical solitons; semiconductor plasma; dispersion relation; effective mass; laser pulse; narrow-gap semiconductors; pulse intensity; saturable nonlinearity; spatial solitons; Conducting materials; Diffraction; Dispersion; Effective mass; Electrons; Gas lasers; III-V semiconductor materials; Optical pulses; Plasma simulation; Solitons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.909704
Filename :
909704
Link To Document :
بازگشت