DocumentCode :
2945852
Title :
Effect of Ar pressure on switching field distribution of CoPtCr-SiO2 perpendicular media
Author :
Vokoun, D. ; Lai, C. ; Lin, M. ; Jiang, R.
Author_Institution :
Nat. Tsing-hua Univ., Hsinchu
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
700
Lastpage :
700
Abstract :
In the present study, the switching field distribution (SFD) of the Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media has been studied in relation to the Ar pressure at which the recording layer was deposited. The goal of the present study is to correlate the SFDs of the Tb/Pt/Ru/CoPtCr-SiO2 media with their intergranular exchange coupling and their grain size distribution.
Keywords :
chromium alloys; cobalt alloys; grain size; magnetic switching; perpendicular magnetic anisotropy; perpendicular magnetic recording; platinum; platinum alloys; ruthenium; silicon compounds; terbium; SFD; Tb-Pt-Ru-CoPtCr-SiO2 - Interface; grain size distribution; intergranular exchange coupling; recording layer; switching field distribution; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Argon; Demagnetization; Grain size; Materials science and technology; Neodymium; Saturation magnetization; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376424
Filename :
4262133
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2945852
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