DocumentCode
2945876
Title
Active silicon-based shockwave formation
Author
Buckwalter, James F.
Author_Institution
University of California-San Diego, La Jolla, 92093, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
201
Lastpage
204
Abstract
An active shockwave transmission line topology is presented that demonstrates edge sharpening to under 10ps using an impedance variation technique. The circuit is demonstrate to sharpen the transition time for periodic signals and consumes under 20 mW while reducing the fall time by 20ps. The circuit is fabricated in a 120 nm CMOS technology and occupies an area of 1.5 mm by 0.4 mm.
Keywords
CMOS integrated circuits; microwave circuits; network topology; transmission lines; CMOS technology; active shockwave transmission line topology; active silicon-based shockwave formation; edge sharpening; electrical pulse sharpening; impedance variation technique; Active inductors; Admittance; Coils; Distributed parameter circuits; Impedance; MOS devices; Performance loss; Power transmission lines; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4633138
Filename
4633138
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