Active silicon-based shockwave formation

An active shockwave transmission line topology is presented that demonstrates edge sharpening to under 10ps using an impedance variation technique. The circuit is demonstrate to sharpen the transition time for periodic signals and consumes under 20 mW while reducing the fall time by 20ps. The circuit is fabricated in a 120 nm CMOS technology and occupies an area of 1.5 mm by 0.4 mm.