DocumentCode :
2945889
Title :
Parylene-C encapsulated TiO2/Glycerol UV sensor implemented on silicon chip using low temperature process
Author :
Fu-Ming Hsu ; Chih-Chun Lee ; Feng-Yu Li ; Weileun Fang
Author_Institution :
Power Mech. Eng. Dept., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
This study presents a novel approach to implement Ultraviolet (UV) sensor using low temperature process. The UV-sensitive TiO2/Glycerol is embedded inside a cavity on silicon chip and then encapsulated by CVD (chemical vapor deposition) parylene C film. In addition, the percentage weight of TiO2 in TiO2/Glycerol can be easily changed to improve the performance of UV sensor. The characteristics of photo-response measured from the presented photo sensor of 0~30 wt% TiO2. Typical measurements show the photo-dark current ratio ranging 2.04-5.70, response time ranging 40-48 sec, and recovery time: ranging 5-10 sec. Moreover, the UV sensor with 20 wt% TiO2 content shows a higher UV sensitivity. The performances of presented sensor with various electrode gap designs (1581-335μm) under 20wt % TiO2 have also been characterized. Typical measurements show the photo-dark current ratio ranging 11.4-5.85, response time ranging 19-23 sec, and recovery time: ranging 1.5-6 sec. Moreover, the UV sensor of with 335 μm gap design show a higher UV sensitivity.
Keywords :
chemical sensors; chemical vapour deposition; electrodes; photodetectors; polymer films; silicon; titanium compounds; ultraviolet detectors; CVD parylene C film; TiO2; UV sensitivity; chemical vapor deposition parylene C film; electrode gap designs; low temperature process; parylene-C encapsulated-glycerol UV sensor; photodark current ratio; photosensor; size 1581 mum to 335 mum; time 1.5 s to 6 s; time 19 s to 23 s; time 40 s to 48 s; time 5 s to 10 s; ultraviolet sensor; Cavity resonators; Current measurement; Electrodes; Films; Photoconductivity; Silicon; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411168
Filename :
6411168
Link To Document :
بازگشت