Title :
High-speed 1.55 /spl mu/m Fe-doped multiple quantum wells saturable absorber
Author :
Marceaux, A. ; Loualiche, S. ; Folliot, Herve ; Dehaese, O. ; Even, J. ; Lambert, B.
Abstract :
Summary form only. Future high-capacity optical communication networks require ultrafast on-line optical regenerators (OR) based on all-optical devices to overcome speed limitations incurred by electronic systems. An optical discriminator is the main component of such regenerators. The vertical cavity saturable absorber optical gate using multiple quantum wells (MQWs) and a distributed Bragg reflector (DBR) offers several advantages such as high contrast, low switching energy and a wide wavelength range. Key parameters of such a device are switching speed and contrast ratio near the excitonic resonance (1.55 /spl mu/m).
Keywords :
III-V semiconductors; excitons; gallium arsenide; high-speed optical techniques; indium compounds; iron; optical saturable absorption; optical switches; quantum well devices; InGaAs-InP:Fe; contrast ratio; distributed Bragg reflector; excitonic resonance; high speed device; multiple quantum wells saturable absorber; optical discriminator; switching energy; switching speed; vertical cavity saturable absorber optical gate; Absorption; Distributed Bragg reflectors; Doping; High speed optical techniques; Iron; Optical devices; Optical pumping; Quantum well devices; Repeaters; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909708
