Title :
A 70-GHz transformer-peaking broadband amplifier in 0.13-¿m CMOS Technology
Author :
Jin, Jun-De ; Hsu, Shawn S H
Author_Institution :
High-Speed Devices&Integrated Circuits Group (HSDIC) Dept. of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
Abstract :
A 70-GHz broadband amplifier is realized in a 0.13-mum CMOS technology. By using five cascaded common-source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB respectively under a power consumption (PDC) of 79.5 mW. With miniaturized transformer design, the core area of the circuit is only ~0.05 mm2. Compared with the state-of-the-art CMOS broadband amplifiers, this work achieves the highest gain-bandwidth product (GBW) of 231 GHz and also the highest GBW/PDC of 2.9 GHz/mW.
Keywords :
CMOS analogue integrated circuits; amplification; transformers; wideband amplifiers; CMOS technology; asymmetric transformer peaking technique; bandwidth 70.6 GHz; broadband amplifier; cascaded common-source stages; gain 10.3 dB; gain-bandwidth product; power 79.5 mW; power consumption; Bandwidth; Broadband amplifiers; CMOS technology; Circuit topology; Energy consumption; Frequency; Impedance matching; Inductors; Resistors; Shunt (electrical); Broadband amplifier; CMOS; common-source stage; gain-bandwidth product; transformer peaking;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633159
