DocumentCode :
2946328
Title :
InP HBT millimeter-wave power amplifier implemented using planar radial power combiner
Author :
O´Sullivan, Tomás ; Urteaga, Miguel ; Pierson, Richard ; Asbeck, Peter M.
Author_Institution :
School of Electrical and Computer Engineering, University of California, San Diego, La Jolla, 92093 USA
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
293
Lastpage :
296
Abstract :
In this paper a millimeter-wave power amplifier implemented using a planar radial type power splitter and combiner is presented. The amplifier achieves an unsaturated output power of 23 dBm at 71 GHz with a corresponding P1dB of 20.8 dBm. The radial layout for the combiner allows 4 unit amplifiers to be combined in a single stage of power combining with a compact layout. The amplifier is implemented using an InP HBT process with ft/fmax values of 300/300 GHz.
Keywords :
III-V semiconductors; bipolar MIMIC; indium compounds; millimetre wave power amplifiers; power combiners; InP; bipolar MIMIC; frequency 71 GHz; millimeter-wave power amplifier; planar radial power combiner; power splitters; CMOS technology; DH-HEMTs; Electronic ballasts; Fingers; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave radar; Millimeter wave technology; Power amplifiers; Power combiners; Power amplifier; millimeter-wave; radial combiner;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4633161
Filename :
4633161
Link To Document :
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