Title :
Spintronics with Multiferroics
Author :
Gajek, M. ; Bea, H. ; Bibes, M. ; Bouzehouane, K. ; Fusil, S. ; Herranz, G. ; Jacquet, E. ; Contour, J. ; Varela, M. ; Fontcuberta, J. ; Fert, A.
Author_Institution :
Unite Mixte de Phys. CNRS/Thales, Palaiseau
Abstract :
Multiferroics belong to a class of compounds that show simultaneous electric and magnetic orders. Multiferroics could be useful for a broad range of applications and have a strong potential for spintronics. Magnetoelectric effect can be used to change the resistance state of a spin-valve or magnetic tunnel junction (MTJ) without applying an external magnetic field. In this regard, both ferroelectric ferromagnets and ferroelectric antiferromagnets can be useful. The oxide heterostructures for spintronics combining multiferroic materials like BFO and LBMO, and ferromagnetic metals like SRO and the LSMO half-metal experimental results are presented. The influence of the ferroelectric nature of these barriers on the conductance and tunnel magnetoresistance is illustrated.
Keywords :
antiferromagnetic materials; bismuth compounds; ferroelectric materials; ferromagnetic materials; lanthanum compounds; magnetic tunnelling; magnetoelectric effects; multiferroics; spin valves; strontium compounds; tunnelling magnetoresistance; BiFeO3; La0.67Sr0.33MnO3; LaxBi1-xMnO3; SrRuO3; conductance; ferroelectric antiferromagnets; ferroelectric ferromagnets; magnetic tunnel junction; magnetoelectric effect; multiferroic materials; oxide heterostructures; spin-valve; spintronics; tunnel magnetoresistance; Antiferromagnetic materials; Conducting materials; Electric resistance; Ferroelectric materials; Inorganic materials; Magnetic materials; Magnetic tunneling; Magnetoelectric effects; Magnetoelectronics; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376450
