Title :
Wideband 400 W pulsed power GaN HEMT amplifiers
Author :
Krishnamurthy, K. ; Martin, J. ; Landberg, B. ; Vetury, R. ; Poulton, M.J.
Author_Institution :
Aerospace and Defense Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USA
Abstract :
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 - 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100 mus pulse width obtains an output power in the range of 401 - 446 W over the band with a drain efficiency of 48 - 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.
Keywords :
high electron mobility transistors; power amplifiers; pulsed power technology; AlGaN-GaN; GaN; HEMT amplifiers; bandwidth 2.9 GHz to 3.5 GHz; efficiency 48 percent to 55 percent; power 400 W; power 401 W to 446 W; pulsed power amplifiers; voltage 65 V; wideband amplifier; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Gallium nitride; HEMTs; Operational amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation; Broadband amplifiers; Gallium Nitride (GaN); High-electron-mobility transistors (HEMTs); Power Amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633163
