DocumentCode :
2946362
Title :
Dielectric breakdown in underoxidized magnetic tunnel junctions
Author :
Ventura, J. ; Ferreira, R. ; Sousa, J.B. ; Freitas, P.P.
Author_Institution :
IFIMUP, Porto
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
727
Lastpage :
727
Abstract :
The authors study the dielectric breakdown (DB) in low resistance, underoxidized Mnlr/CoFe/AlOx/CoFe magnetic tunnel junctions (MTJs) and show that the breakdown occurred at localized spots of the barrier where large concentration of oxygen vacancies exist. They also show the dependence of the tunneling magnetoresistance (TMR) on the applied current of a 1x1 mum2 MTJ with (30 s)+(30 s)+5 oxidation time.
Keywords :
cobalt alloys; electric breakdown; ferromagnetic materials; iridium alloys; iron alloys; manganese alloys; oxidation; tunnelling magnetoresistance; vacancies (crystal); AlO; CoFe; MnIr; dielectric breakdown; oxidation; oxygen vacancies; tunneling magnetoresistance; underoxidized magnetic tunnel junctions; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Electric resistance; Magnetic properties; Magnetic sensors; Magnetic tunneling; Oxidation; Plasma displays; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376451
Filename :
4262160
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2946362
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