Title :
High temperature GaInAsSb/GaAlAsSb quantum well continuous wave lasers
Author :
Yarekha, D.A. ; Glastre, Genevieve ; Perona, A. ; Rouillard, Y. ; Boissier, G. ; Vicet, A. ; Alibelt, C. ; Baranov, A.N.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Summary form only. The wavelength range between 2.2 and 2.4 /spl mu/m are of great interest for molecular spectroscopy and environmental monitoring. Tunable diode laser absorption spectroscopy is one of the most accurate techniques for gas analysis and to reduce the cost of the equipment diode lasers operating in continuous wave (cw) regime above room temperature (RT) are required. In this contribution we present single mode GaInSbAs-GaAlSbAs QW lasers operating in cw regime up to 130/spl deg/C.
Keywords :
III-V semiconductors; air pollution measurement; gallium arsenide; gas sensors; indium compounds; infrared spectroscopy; monitoring; quantum well lasers; spectrochemical analysis; spectroscopic light sources; 130 C; 2.2 to 2.4 mum; GaInAsSb/GaAlAsSb quantum well continuous wave lasers; GaInSbAs-GaAlSbAs; GaInSbAs-GaAlSbAs QW lasers; cw regime; diode lasers; environmental monitoring; gas analysis; high temperature; molecular spectroscopy; room temperature; single mode; tunable diode laser absorption spectroscopy; Absorption; Diode lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Optical fiber devices; Optical pulses; Quantum well lasers; Temperature; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909732
