Title :
Optical gain and loss in 2.3-2.5 /spl mu/m InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers
Author :
Garbuzov, D.Z. ; Belenky, G.L. ; Donetsky, D.V. ; Martinelli, R.U. ; Lee, H. ; Connolly, J.C.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
Summary form only. We measured the current and temperature dependencies of the modal gain in 2.3-2.5 /spl mu/m InGaAsSb-AlGaAsSb-GaSb broad-area ridge-waveguide lasers. The laser active region consists of two strained quantum wells surrounded by two 0.34 /spl mu/m undoped Al/sub 0.31/Ga/sub 0.69/As/sub 0.625/Sb/sub 0.375/ separate confinement layers. The room-temperature optical-gain data obtained for a 2.3-/spl mu/m broad-area device allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 2.3 to 2.5 mum; InGaAsSb-AlGaAsSb QW broad-area ridge-waveguide lasers; InGaAsSb-AlGaAsSb-GaSb; InGaAsSb-AlGaAsSb-GaSb broad-area ridge-waveguide lasers; internal efficiency; internal loss; laser active region; material gain; optical gain; optical loss; room-temperature optical-gain data; separate confinement layers; strained quantum wells; Land surface temperature; Lead; Mirrors; Molecular beam epitaxial growth; Optical losses; Optical pumping; Optical sensors; Semiconductor laser arrays; Stimulated emission; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909733
