Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits

Author

Otsuka, H. ; Yamanaka, K. ; Noto, H. ; Tsuyama, Y. ; Chaki, S. ; Inoue, A. ; Miyazaki, M.

Author_Institution

Mitsubishi Electric Corporation, Information Technology R&D Center, 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501 Japan

fYear

2008

fDate

15-20 June 2008

Firstpage

311

Lastpage

314

Abstract

In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100 W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave power transistors; network topology; power semiconductor devices; wide band gap semiconductors; C-band HEMT high power amplifier; GaN; circuit topology; drain efficiency; efficiency 50 percent; efficiency 57 percent; internal harmonic manipulation circuits; power 100 W; power-added-efficiency; Circuits; Frequency; Gallium nitride; HEMTs; High power amplifiers; Impedance; Power amplifiers; Power generation; Power system harmonics; Pulse amplifiers; GaN HEMT; Harmonic manipulation; High efficiency; High power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633165

Filename

4633165