DocumentCode
2946469
Title
A Spin Torque Perpendicular MRAM Design Scalable beyond 50 Gbits/in^2 Density
Author
Zhu, X. ; Zhu, J.
Author_Institution
Carnegie Mellon Univ., Pittsburgh
fYear
2006
fDate
8-12 May 2006
Firstpage
734
Lastpage
734
Abstract
In this paper, the MRAM design utilizes material intrinsic perpendicular anisotropy is analyzed via micromagnetic simulation with inclusion of spin momentum transfer effects.
Keywords
inclusions; micromagnetics; perpendicular magnetic anisotropy; perpendicular magnetic recording; random-access storage; torque; MRAM design; inclusion; intrinsic perpendicular anisotropy; micromagnetic simulation; spin momentum transfer; spin torque; Anisotropic magnetoresistance; Design engineering; Fabrication; Magnetic domains; Magnetic materials; Magnetic switching; Magnetization; Magnetostriction; Random access memory; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376458
Filename
4262167
Link To Document