Title :
A Spin Torque Perpendicular MRAM Design Scalable beyond 50 Gbits/in^2 Density
Author :
Zhu, X. ; Zhu, J.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh
Abstract :
In this paper, the MRAM design utilizes material intrinsic perpendicular anisotropy is analyzed via micromagnetic simulation with inclusion of spin momentum transfer effects.
Keywords :
inclusions; micromagnetics; perpendicular magnetic anisotropy; perpendicular magnetic recording; random-access storage; torque; MRAM design; inclusion; intrinsic perpendicular anisotropy; micromagnetic simulation; spin momentum transfer; spin torque; Anisotropic magnetoresistance; Design engineering; Fabrication; Magnetic domains; Magnetic materials; Magnetic switching; Magnetization; Magnetostriction; Random access memory; Torque;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376458
