Title :
Spin-flop switching of the guided synthetic anti-ferromagnet MRAM
Author :
Zheng, Y. ; Qiu, J. ; Li, K. ; Han, G. ; Guo, Z. ; Luo, P. ; An, L. ; Liu, Z. ; Liu, B. ; Wu, Y.
Author_Institution :
Data Storage Inst., Singapore
Abstract :
In this work, a new MRAM structure with guided SAF layers is presented. This new structure addresses the issues regarding additional read operation, reduction of saturation field, write operation margin, and unintentional switching.
Keywords :
antiferromagnetic materials; magnetic recording; magnetic switching; magnetoresistive devices; random-access storage; MRAM structure; guided SAF layers; guided synthetic anti-ferromagnet; read operation; saturation field; spin-flop switching; unintentional switching; write operation margin; Antiferromagnetic materials; Commercialization; Magnetic fields; Magnetic recording; Magnetic tunneling; Magnetization; Magnetoelectronics; Memory; Monitoring; Writing;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376459
