DocumentCode
2946489
Title
Spin-flop switching of the guided synthetic anti-ferromagnet MRAM
Author
Zheng, Y. ; Qiu, J. ; Li, K. ; Han, G. ; Guo, Z. ; Luo, P. ; An, L. ; Liu, Z. ; Liu, B. ; Wu, Y.
Author_Institution
Data Storage Inst., Singapore
fYear
2006
fDate
8-12 May 2006
Firstpage
735
Lastpage
735
Abstract
In this work, a new MRAM structure with guided SAF layers is presented. This new structure addresses the issues regarding additional read operation, reduction of saturation field, write operation margin, and unintentional switching.
Keywords
antiferromagnetic materials; magnetic recording; magnetic switching; magnetoresistive devices; random-access storage; MRAM structure; guided SAF layers; guided synthetic anti-ferromagnet; read operation; saturation field; spin-flop switching; unintentional switching; write operation margin; Antiferromagnetic materials; Commercialization; Magnetic fields; Magnetic recording; Magnetic tunneling; Magnetization; Magnetoelectronics; Memory; Monitoring; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376459
Filename
4262168
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