DocumentCode
2946618
Title
Ba-hexaferrite films grown on single crystal 6-H SiC with Low FMR Linewidth
Author
Chen, Z. ; Yang, A. ; Yoon, S. ; Ziemer, K. ; Vittoria, C. ; Harris, V.
Author_Institution
Northeastern Univ., Boston
fYear
2006
fDate
8-12 May 2006
Firstpage
741
Lastpage
741
Abstract
In this paper, the growth of barium hexaferrite thin films on single crystal 6H silicon carbide was demonstrated. The preparation was done using pulsed laser deposition with a KrF excimer laser operating at 248 nm wavelength with 200 mJ energy per shot. The structure of the thin films were characterized using X-ray diffraction, AFM and SEM. The coercivities and the FMR linewidth of the films were determined using VSM.
Keywords
X-ray diffraction; atomic force microscopy; barium compounds; coercive force; ferrites; ferromagnetic resonance; magnetic thin films; pulsed laser deposition; scanning electron microscopy; AFM; BaFe12O19; FMR linewidth; SEM; SiC; X-ray diffraction; barium hexaferrite thin films; coercivity; energy 200 mJ; pulsed laser deposition; single crystal 6H silicon carbide; structure; wavelength 248 nm; Barium; Coercive force; Magnetic resonance; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon carbide; Transistors; X-ray diffraction; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376465
Filename
4262174
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