Title :
Ba-hexaferrite films grown on single crystal 6-H SiC with Low FMR Linewidth
Author :
Chen, Z. ; Yang, A. ; Yoon, S. ; Ziemer, K. ; Vittoria, C. ; Harris, V.
Author_Institution :
Northeastern Univ., Boston
Abstract :
In this paper, the growth of barium hexaferrite thin films on single crystal 6H silicon carbide was demonstrated. The preparation was done using pulsed laser deposition with a KrF excimer laser operating at 248 nm wavelength with 200 mJ energy per shot. The structure of the thin films were characterized using X-ray diffraction, AFM and SEM. The coercivities and the FMR linewidth of the films were determined using VSM.
Keywords :
X-ray diffraction; atomic force microscopy; barium compounds; coercive force; ferrites; ferromagnetic resonance; magnetic thin films; pulsed laser deposition; scanning electron microscopy; AFM; BaFe12O19; FMR linewidth; SEM; SiC; X-ray diffraction; barium hexaferrite thin films; coercivity; energy 200 mJ; pulsed laser deposition; single crystal 6H silicon carbide; structure; wavelength 248 nm; Barium; Coercive force; Magnetic resonance; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon carbide; Transistors; X-ray diffraction; X-ray lasers;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376465
