• DocumentCode
    2946769
  • Title

    A simple through-only de-embedding method for on-wafer S-parameter measurements up to 110 GHz

  • Author

    Hiroyuki Ito ; Masu, Kazuya

  • Author_Institution
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, Japan
  • fYear
    2008
  • fDate
    15-20 June 2008
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    The present paper proposes the simple deembedding method for 110-GHz on-wafer S-parameter measurements. While conventional de-embedding methods require two or more dummy patterns, our method only uses a through pattern and can perform accurate de-embedding up to 110 GHz. Differences among the proposed method and previous through-only de-embedding methods are that our method is available for various device under tests and higher frequencies.
  • Keywords
    S-parameters; millimetre wave integrated circuits; deembedding method; device under tests; frequency 110 GHz; onwafer S-parameter measurements; Atherosclerosis; CMOS process; Calibration; Circuits; Dielectric substrates; Millimeter wave measurements; Paper technology; Radio frequency; Scattering parameters; Testing; RF CMOS; S-parameter measurement; de-embedding; mm-wave band; on-wafer measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • Conference_Location
    Atlanta, GA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4633183
  • Filename
    4633183