DocumentCode
2946769
Title
A simple through-only de-embedding method for on-wafer S-parameter measurements up to 110 GHz
Author
Hiroyuki Ito ; Masu, Kazuya
Author_Institution
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Japan
fYear
2008
fDate
15-20 June 2008
Firstpage
383
Lastpage
386
Abstract
The present paper proposes the simple deembedding method for 110-GHz on-wafer S-parameter measurements. While conventional de-embedding methods require two or more dummy patterns, our method only uses a through pattern and can perform accurate de-embedding up to 110 GHz. Differences among the proposed method and previous through-only de-embedding methods are that our method is available for various device under tests and higher frequencies.
Keywords
S-parameters; millimetre wave integrated circuits; deembedding method; device under tests; frequency 110 GHz; onwafer S-parameter measurements; Atherosclerosis; CMOS process; Calibration; Circuits; Dielectric substrates; Millimeter wave measurements; Paper technology; Radio frequency; Scattering parameters; Testing; RF CMOS; S-parameter measurement; de-embedding; mm-wave band; on-wafer measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4633183
Filename
4633183
Link To Document