10 Gbit/s directly modulated GaInPAs and GaInAlAs semiconductor ridge lasers up to 85 C at 1310 nm

Summary form only given. Directly modulated semiconductor lasers are currently running at 10 Gbit/s. However these devices require thermo-electric coolers to attain their speed. As transmiter prices drop and power budgets become tighter, it is desirable to remove the thermo-electric cooler and require the directly modulated semiconductor laser to operate at temperatures up to 85 C. First we present results showing that a conventional GaInPAs semiconductor ridge laser designed for low temperature 10 Gbit/s operation may be extended to higher temperatures.