High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide

Author

Chun-Hua Cai ; Ming Qin ; Jian-Qiu Huang

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO). Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of -70° to 40°. The bulk silicon temperature sensor was composed of the bulk silicon interdigital electrodes and the GO sensing material. The bulk silicon interdigital electrodes were achieved on CMOS substrate by a post-CMOS process.

Keywords

CMOS integrated circuits; capacitive sensors; chemical sensors; electrodes; graphene; temperature sensors; CMOS integrated temperature sensors; CMOS substrate; bulk silicon interdigital electrodes; graphene oxide; high-performance bulk silicon interdigital capacitive temperature sensor; post-CMOS process; sensing material; CMOS integrated circuits; Electrodes; Graphene; Silicon; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411222

Filename

6411222