Title :
High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide
Author :
Chun-Hua Cai ; Ming Qin ; Jian-Qiu Huang
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
This paper presents a bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO). Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of -70° to 40°. The bulk silicon temperature sensor was composed of the bulk silicon interdigital electrodes and the GO sensing material. The bulk silicon interdigital electrodes were achieved on CMOS substrate by a post-CMOS process.
Keywords :
CMOS integrated circuits; capacitive sensors; chemical sensors; electrodes; graphene; temperature sensors; CMOS integrated temperature sensors; CMOS substrate; bulk silicon interdigital electrodes; graphene oxide; high-performance bulk silicon interdigital capacitive temperature sensor; post-CMOS process; sensing material; CMOS integrated circuits; Electrodes; Graphene; Silicon; Temperature measurement; Temperature sensors;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411222
