DocumentCode :
2947099
Title :
Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications
Author :
Weng, Shou-Hsien ; Lin, Chi-Hsien ; Chang, Hong-Yeh ; Chiong, Chau-Ching
Author_Institution :
Department of Electrical Engineering, National Central University, Jhongli, Taoyuan, 320, Taiwan, R. O. C.
fYear :
2008
fDate :
15-20 June 2008
Firstpage :
455
Lastpage :
458
Abstract :
Two Q-band low noise amplifiers using a 0.15-μm InGaAs MHEMT process for broadband communication and radio astronomy applications are presented in this paper. Between 37 and 53 GHz, the LNA1 features a small signal gain of higher than 31 dB, a noise figure of better than 3.5 dB with a minimum noise figure of 2.8 dB at 44 GHz, and a gain-bandwidth product (GBP) of 679 GHz. Between 32 and 50 GHz, the LNA2 features a small signal gain of higher than 28 dB, a noise figure of better than 3.2 dB with a minimum noise figure of 2.6 dB at 44 GHz, and a GBP of 569 GHz. The chip sizes of the LNA1 and LNA2 are both 2 x 1 mm2. The LNAs demonstrate broad bandwidth, high gain, low noise figure, and compact chip size, and they will be further applied to a few broadband receivers for communications and radio astronomy applications. Moreover, this work demonstrates the highest GBP among all the reported Q-band LNAs.
Keywords :
Bandwidth; Broadband amplifiers; Broadband communication; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Radio astronomy; mHEMTs; Broadband; InGaAs; MHEMT; high gain; low noise figure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2008.4633201
Filename :
4633201
Link To Document :
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