Experimental cryogenic modeling and noise of SiGe HBTs

Author

Bardin, Joseph C. ; Weinreb, Sander

Author_Institution

California Institute of Technology, Pasadena, 91125, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

459

Lastpage

462

Abstract

SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedure for extracting a simple equivalent circuit model capable of accurately describing SiGe HBT devices. Next, small-signal modeling results obtained for a 3times0.12times18um² SiGe HBT at 15, 40, 77, 120, 200, and 300 K are presented along with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performance is presented as a function of temperature and frequency using the concept of minimum cascaded noise temperature, a figure of merit which incorporates both noise temperature and gain.

Keywords

Ge-Si alloys; cryogenic electronics; equivalent circuits; heterojunction bipolar transistors; semiconductor materials; HBT; cryogenic modeling; cryogenically cooled amplifiers; equivalent circuit; minimum cascaded noise temperature; temperature 15 K to 300 K; Circuit noise; Cooling; Cryogenics; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Silicon germanium; Temperature; Silicon-germanium (SiGe); cryogenic; low noise amplifier (LNA); noise parameters; transistor modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633202

Filename

4633202