DocumentCode
2947168
Title
Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors
Author
Sachelarie, D. ; Stanciu, S.G. ; Stanciu, G.A.
Author_Institution
Univ. Politehnica of Bucharest, Bucharest
fYear
2007
fDate
6-8 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.
Keywords
III-V semiconductors; atomic force microscopy; crystal orientation; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface topography; AFM; InP-InGaAs; atomic force microscopy; collector current; current gain; emitter crystallographic orientations; heterojunction bipolar transistors; mesa surface; three-dimensional surface topography; Atomic force microscopy; Degradation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Shape; Silicon; Stress; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007
Conference_Location
Sousse
Print_ISBN
978-1-4244-1639-4
Electronic_ISBN
978-1-4244-1639-4
Type
conf
DOI
10.1109/ICTONMW.2007.4446981
Filename
4446981
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