Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor lasers. Design and applications

Author

Garnache, A. ; Tropper, A.C. ; Kachanov, A. ; Romanini, D. ; Stoeckel, F. ; Planel, R. ; Thierry-Mieg, V. ; Houdre, R.

Author_Institution

Dept. of Phys. & Astron., Southampton Univ., UK

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. We report the demonstration of high output power (>1 W), single frequency and ultra-short pulse operation (<5 ps) of a newly developed Diode-Pumped broadband Multiple-Quantum-Well Vertical-External-Cavity Surface-Emitting semiconductor Laser (DP-VECSEL). The laser operates cw at room temperature with a low divergence circular TEM/sub 00/ beam and is broadly tunable (>50 nm) by simply changing the lasing spot position on the wafer. We also demonstrate, for the first time to our knowledge, high sensitivity Intra-Cavity Laser Absorption Spectroscopy (ICLAS) with a DP-VECSEL. A detection limit lower than 10/sup -10/ per cm of absorption path has been achieved given /spl sim/10/sup -11/ cmHz/sup 1/2/. For this application, the spectro-temporal dynamics of the DP-VECSEL has been studied in the time range from a few microseconds to about one second.

Keywords

optical pumping; quantum well lasers; spectrochemical analysis; surface emitting lasers; broadband operation; diode pumping; intra-cavity laser absorption spectroscopy; vertical external cavity surface emitting semiconductor laser; Absorption; Frequency; Optical pulses; Power generation; Power lasers; Quantum well devices; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909800

Filename

909800