A high power and high efficiency 20 GHz InP HBT monolithic power amplifier for phased array applications

Author

Aust, Michael V. ; Sharma, Arvind K. ; Gutierrez-Aitken, Augusto L.

Author_Institution

Northrop Grumman, One Space Park, Redondo Beach, CA 90278, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

1127

Lastpage

1130

Abstract

A high performance single chip monolithic power amplifier suitable for 20 GHz phased array applications exhibiting high power and high efficiency is presented in this paper. The amplifier demonstrates a 14 dB linear gain, a maximum CW power of 32 dBm, and a 30% power-added-efficiency. For the power amplifier design, we have utilized load pull analysis on HBT devices at various power levels. This power amplifier achieved the highest power and efficiency, demonstrating the suitability of the InGaAs/InAlAs/InP HBT production process for phased array applications.

Keywords

III-V semiconductors; aluminium compounds; antenna phased arrays; gallium arsenide; heterojunction bipolar transistors; indium compounds; power amplifiers; HBT monolithic power amplifier; InGaAs-InAlAs-InP; frequency 20 GHz; high performance single chip monolithic power amplifier; phased array applications; power amplifier design; power-added-efficiency; Gain; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Linearity; MMICs; Phased arrays; Power amplifiers; Power generation; Substrates; InP HBT; MMIC; high efficiency; high power; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633255

Filename

4633255